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BUK9MHH-65PNN dual trenchplus fet logic level fet rev. 03 ? 18 june 2010 product data sheet 1. product profile 1.1 general description dual n-channel enhancement mode field-effe ct power transistor in so20. device is manufactured using nxp high-performance ar chitecture (hpa) trenchplus technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 features and benefits ? integrated current sensors ? integrated temperature sensors 1.3 applications ? lamp switching ? motor drive systems ? power distribution ? solenoid drivers 1.4 quick reference data table 1. quick reference data symbol parameter conditions min typ max unit fet1 and fet2 static characteristics r dson drain-source on-state resistance v gs =5v; i d =10a; t j =25c; see figure 15 ; see figure 16 - 9.8 11.5 m ? i d /i sense ratio of drain current to sense current t j =25c; v gs =5v; see figure 17 6193 6881 7569 a/a v (br)dss drain-source breakdown voltage i d = 250 a; v gs =0v; t j =25c 65--v
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 2 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet 2. pinning information 3. ordering information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g1 gate 1 sot163-1 (so20) 2 is1 current sense 1 3d1drain 4 a1 anode 1 5 c1 cathode 1 6 g2 gate 2 7 is2 current sense 2 8d2drain 2 9 a2 anode 2 10 c2 cathode 2 11 d2 drain 2 12 ks2 kelvin source 2 13 s2 source 2 14 s2 source 2 15 d2 drain 2 16 d1 drain 1 17 ks1 kelvin source 1 18 s1 source 1 19 s1 source 1 20 d1 drain 1 10 20 11 1 003aaa745 fet1 fet2 g1 is1 s1 ks1 c1 g2 is2 s2 ks2 c2 d1 a1 d2 a2 table 3. ordering information type number package name description version BUK9MHH-65PNN so20 plastic small outline packa ge; 20 leads; body width 7.5 mm sot163-1
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 3 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet 4. limiting values [1] single device conducting. [2] continuous current is limited by package. [3] current is limited by ch ip power dissipation rating. [4] single-pulse avalanche rati ng limited by maximum junction temperature of 150 c. [5] repetitive rating defined in avalanche rating figure. [6] refer to application note an10273 for further information. table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min typ max unit fet1 and fet2 v ds drain-source voltage 25 c t j 150c --65v v dgr drain-gate voltage r gs =20k ? ; 25 c t j 150c --65v v gs gate-source voltage -15 - 15 v i d drain current v gs =5v; t sp = 25 c; see figure 1 [1] [2] --15a v gs =5v; t sp =100c; see figure 1 [1] [2] --9.5a i dm peak drain current t sp = 25 c; pulsed; t p 10 s; see figure 4 - - 319 a p tot total power dissipation t sp =25c; see figure 2 --5w t stg storage temperature -55 - 150 c t j junction temperature -55 - 150 c v isol(fet-tsd) fet to temperature sense diode isolation voltage - - 100 v fet1 and fet2 source-drain diode i s source current t sp =25c [1] [3] --7a i sm peak source current pulsed; t p 10 s; t sp = 25 c - - 319 a fet1 and fet2 avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =15.1a; v sup =65v; v gs =5v; t j(init) = 25 c; unclamped; see figure 3 [4] [5] [6] - - 878 mj fet1 and fet2 electrostatic discharge v esd electrostatic discharge voltage hbm; c = 100 pf; r = 1.5 k ? ; all pins - - 0.15 kv hbm; c = 100 pf; r = 1.5 k ? ; pins 8, 11 and 15 to pins 6, 7, 12, 13 and 14 shorted --4kv hbm; c = 100 pf; r = 1.5 k ? ; pins 3, 16 and 20 to pins 1, 2, 17, 18 and 19 shorted --4kv
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 4 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet fig 1. continuous drain current as a function of solder point temperature, fet1 and fet2 fig 2. normalized total power dissipation as a function of solder point temperature, fet1 and fet2 fig 3. single-pulse and repetitive avalanche rating; avalanche curren t as a function of avalanche time. t sp ( c) 0 200 150 50 100 001aal615 8 4 12 16 i d (a) 0 003aab388 0 40 80 120 0 50 100 150 200 t sp ( c) p der (%) 001aal679 10 1 10 2 i al (a) 10 ? 1 t al (ms) 10 ? 3 10 1 10 ? 2 10 ? 1 (1) (2) (3)
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 5 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet 5. thermal characteristics fig 4. safe operating area; continuous and peak drain currents as a function of drain-source voltage 001aal760 1 10 ? 1 10 2 10 10 3 i d (a) 10 ? 2 v ds (v) 10 ? 1 10 2 10 1 100 s 1 ms 10 ms 100 ms t p = 10 s dc limit r dson = v ds / i d table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point fet1 --25k/w fet2 --25k/w r th(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; both channels conducting; zero heat sink area; see figure 5 -73-k/w mounted on a printed-circuit board; both channels conducting; 200 mm2 copper heat sink area; see figure 6 -60-k/w mounted on a printed-circuit board; both channels conducting; 400 mm2 copper heat sink area; see figure 7 -51-k/w mounted on a printed-circuit board; one channel conducting; zero heat sink area; see figure 5 - 105 - k/w mounted on a printed-circuit board; one channel conducting; 200 mm2 copper heat sink area; see figure 6 -90-k/w mounted on a printed-circuit board; one channel conducting; 400 mm2 copper heat sink area; see figure 7 -70-k/w
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 6 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet fig 5. pcb used for thermal tests; zero heat sink area fig 6. pcb used for thermal tests; heat sink area 200 mm2 fig 7. pcb used for thermal tests; heat sink area 400 mm2 fig 8. transient thermal impedance from junction to ambient as a function of pulse duration 001aae478 001aae479 001aae480 001aal806 t p (s) 10 ? 6 10 2 10 3 10 4 10 10 ? 2 10 ? 1 1 10 ? 5 10 ? 3 10 ? 4 10 ? 1 10 ? 2 10 1 10 2 z th(j-amb) (k/w) 10 ? 3 t p t p t p t t = single shot = 0.5 0.1 0.2 0.05 0.02
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 7 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit fet1 and fet2 static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 65--v i d =250a; v gs =0v; t j = -55 c 59 - - v v gsth gate-source threshold voltage i d =1ma; v ds =v gs ; t j =25c; see figure 13 ; see figure 14 11.52v i d =1ma; v ds =v gs ; t j = 150 c; see figure 13 ; see figure 14 0.5--v i d =1ma; v ds =v gs ; t j =-55c; see figure 13 ; see figure 14 --2.3v i dss drain leakage current v ds =52v; v gs =0v; t j = 25 c - 0.02 3 a v ds =52v; v gs =0v; t j = 150 c - - 125 a i gss gate leakage current v ds =0v; v gs =15v; t j = 25 c - 2 300 na r dson drain-source on-state resistance v gs =4.5v; i d =10a; t j =25c; see figure 15 ; see figure 16 - - 12.6 m ? v gs =5v; i d =10a; t j =25c; see figure 15 ; see figure 16 - 9.8 11.5 m ? v gs =5v; i d =10a; t j = 150 c; see figure 15 ; see figure 16 - - 21.9 m ? v gs =10v; i d =10a; t j =25c; see figure 15 ; see figure 16 - - 10.6 m ? i d /i sense ratio of drain current to sense current v gs =5v; t j =25c; see figure 17 6193 6881 7569 a/a s f(tsd) temperature sense diode temperature coefficient i f = 250 a; 25 c t j 150 c; see figure 18 -5.4 -5.7 -6 mv/k v f(tsd) temperature sense diode forward voltage i f = 250 a; t j =25c; see figure 18 2.855 2.9 2.945 v
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 8 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet fet1 and fet2 dynamic characteristics q g(tot) total gate charge i d =10a; v ds =52v; v gs =5v; see figure 19 - 44.6 - nc q gs gate-source charge - 7.22 - nc q gd gate-drain charge - 16.8 - nc c iss input capacitance v gs =0v; v ds =25v; f=1mhz; t j =25c; see figure 20 - 3643 - pf c oss output capacitance - 496 - pf c rss reverse transfer capacitance - 186 - pf t d(on) turn-on delay time v ds =30v; r l =3 ? ; v gs =5v; r g(ext) =10 ? -40-ns t r rise time - 76 - ns t d(off) turn-off delay time v ds =30v; v gs =5v; r g(ext) =10 ? - 188 - ns t f fall time v ds =30v; r l =3 ? ; v gs =5v; r g(ext) =10 ? - 108 - ns l d internal drain inductance from pin to center of die - 0.9 - nh l s internal source inductance from source lead to source bonding pad -2-nh fet1 and fet2 source-drain diode v sd source-drain voltage i s =10a; v gs =0v; t j =25c; see figure 21 - 0.85 1.2 v t rr reverse recovery time i s =10a; di s /dt = -100 a/s; v gs =-10v; v ds =30v -54-ns q r recovered charge - 0.131 - nc table 6. characteristics ?continued symbol parameter conditions min typ max unit fig 9. output characteristics: drain current as a function of drain current; typical values, fet1 and fet2 fig 10. drain-source on-state resistance as a function of gate-source voltage; typical values, fet1 and fet2 003aad955 0 40 80 120 160 200 240 0246810 v ds (v) i d (a) v gs (v) =2.5 v 3.5 4.5 3.0 5.0 10.0 4.0 003aad956 0 15 30 45 60 0246810 v gs (v) r ds on (m )
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 9 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet fig 11. forward transconductance as a function of drain current; typical values, fet1 and fet2 fig 12. transfer characteristics; drain current as a function of gate-source voltage; typical values, fet1 and fet2 fig 13. sub-threshold drain current as a function of gate-source voltage, fet1 and fet2 fig 14. gate-source threshold voltage as a function of junction temperature, fet1 and fet2 003aad957 200 250 300 350 0 1020304050 i d (a) g fs (s ) 003aae484 0 25 50 75 100 01234 v gs (v) i d (a) t j = 150 c 25 c 001aal621 v gs (v) 03 2 1 10 ? 4 10 ? 5 10 ? 2 10 ? 3 10 ? 1 i d (a) 10 ? 6 min typ max t j ( c) ? 60 180 120 060 001aal622 1.0 1.5 0.5 2.0 2.5 v gs(th) (v) 0 min typ max
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 10 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet fig 15. drain-source on-state resistance as a function of drain current; typical values, fet1 and fet2 fig 16. normalized drain-source on-state resistance factor as a function of junction temperature fig 17. ratio of drain current to sense current as a function of gate-source voltage; typical values, fet1 and fet2 fig 18. temperature sense diode forward voltage as a function of junction temperature; typical values, fet1 and fet2 i d (a) 0 200 160 80 120 40 003aae485 40 60 20 80 100 r dson (m ) 0 v gs (v) = 10 v 5.0 2.5 3.0 3.5 4.0 4.5 t j ( c) ? 60 180 120 060 001aal794 1.0 1.5 0.5 2.0 a 0 003aad959 0 2000 4000 6000 8000 10000 246810 v gs (v) i d /i sense t j ( c) 0 160 120 40 80 001aae485 2.0 2.5 3.0 v f(tsd) (v) 1.5
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 11 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet fig 19. gate-source voltage as a function of turn-on gate charge; typical values, fet1 and fet2 fig 20. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values, fet1 and fet2 fig 21. source (diode forward) current as a function of s ource-drain (diode forward) vo ltage; typical values, fet1 and fet2 q g (nc) 050 40 20 30 10 001aal818 2 3 1 4 5 v gs (v) 0 v ds = 14 v v ds = 52 v 003aae483 10 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss 001aal614 v sd (v) 0 1.5 1.0 0.5 30 15 45 60 i s (a) 0
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 12 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet 7. package outline fig 22. package outline sot163-1 (so20) unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v references outline version european projection issue date iec jedec jeita mm inches 2.65 0.3 0.1 2.45 2.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.1 0.4 sot163-1 10 20 w m b p detail x z e 11 1 d y 0.25 075e04 ms-013 pin 1 index 0.1 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.51 0.49 0.30 0.29 0.05 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale x a a 1 a 2 h e l p q e c l v m a (a ) 3 a so20: plastic small outline package; 20 leads; body width 7.5 mm sot163-1 99-12-27 03-02-19
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 13 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes BUK9MHH-65PNN v.3 20100618 product data sheet - BUK9MHH-65PNN v.2 modifications: ? status changed from objective to product. BUK9MHH-65PNN v.2 20100519 objective data sheet - -
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 14 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qualified for use in automotive applications. the product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be ex pected to result in personal injury, death or severe property or environmental dam age. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualific ation this document contains data fr om the preliminary specification. product [short] data sheet production this doc ument contains the product specification.
BUK9MHH-65PNN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 03 ? 18 june 2010 15 of 16 nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 9.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BUK9MHH-65PNN dual trenchplus fet logic level fet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 18 june 2010 document identifier: BUK9MHH-65PNN please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 9 legal information. . . . . . . . . . . . . . . . . . . . . . . .14 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 10 contact information. . . . . . . . . . . . . . . . . . . . . .15

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